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 2 - 8 GHz Medium Power Gallium Arsenide FET Technical Data
ATF-44101
Features
* High Output Power: 32.0 dBm Typical P 1 dB at 4 GHz * High Gain at 1 dB Compression: 8.5 dB Typical G 1 dB at 4 GHz * High Power Efficiency: 35% Typical at 4 GHz * Hermetic Metal-Ceramic Stripline Package
range. This nominally .5 micron gate length GaAs FET is an interdigitated four-cell structure using airbridge interconnects between source fingers. Total gate periphery is 5 millimeters. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. This device is suitable for applications in space, airborne, military ground and shipboard, and commercial environments. It is supplied in a hermetic high reliability package with low parasitic reactance and minimum thermal resistance.
100 mil Flange
Description
The ATF-44101 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 8 GHz frequency
Electrical Specifications, TA = 25C
Symbol P1 dB G1 dB add gm IDSS VP Parameters and Test Conditions Power Output @ 1 dB Gain Compression: VDS =9 V, IDS = 500 mA 1 dB Compressed Gain: VDS = 9 V, IDS = 500 mA Efficiency @ P1dB: VDS = 9 V, IDS = 500 mA Transconductance: VDS = 2.5 V, IDS = 500 mA Saturated Drain Current: VDS = 1.75 V, VGS = 0 V Pinch-off Voltage: VDS = 2.5 V, IDS = 25 mA f = 4.0 GHz f = 6.0 GHz f = 4.0 GHz f = 6.0 GHz f = 4.0 GHz Units dBm dB % mmho mA V 800 -5.4 Min. 31.0 7.5 Typ. Max. 32.0 31.5 8.5 5.5 35 300 1300 -4.0 1500 -2.0
5-89
5965-8727E
ATF-44101 Absolute Maximum Ratings
Symbol VDS VGS VGD I DS PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Gate-Drain Voltage Drain Current Power Dissipation [2,3] Channel Temperature Storage Temperature Units V V V mA W C C Absolute Maximum [1] +14 -7 -16 IDSS 6.5 175 -65 to +175
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE TEMPERATURE = 25C. 3. Derate at 43 mW/C for TCASE > 25C. 4. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section for more information.
Thermal Resistance: Liquid Crystal Measurement:
jc = 23C/W; TCH = 150C 1 m Spot Size[4]
ATF-44101 Typical Performance, TA = 25C
33 16 35 30 32
P1 dB (dBm)
P1 dB
25
20 12
G1 dB (dBm) POUT (dBm)
25 20 15 10 5 40 30 20 10 0 0 5 10 15 PIN (dBm) 20 25 30 0 1.0
add (%) GAIN (dB)
15
MSG
31
G1 dB
8
10
30
4
5
|S21|2
29 2.0
4.0 FREQUENCY (GHz)
6.0
0 8.0
0
2.0
4.0
6.0 8.0
12.0
FREQUENCY (GHz)
Figure 1. Power Output @ 1 dB Gain Compression and 1 dB Compressed Gain vs. Frequency. VDS = 9V, IDS = 500 mA.
Figure 2. Output Power and Power Added Efficiency vs. Input Power. VDS = 9 V, IDS = 500 mA, f = 4 GHz.
Figure 3. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VDS = 9 V, IDS = 500 mA.
5-90
Typical Scattering Parameters, Common Emitter, Z O = 50 , TA = 25C, VDS = 9 V, IDS = 500 mA
Freq. GHz 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 Mag. .88 .87 .87 .87 .88 .88 .89 .89 .88 .86 .81 .77 S11 Ang. -125 -161 -178 168 153 136 122 114 109 103 91 74 dB 13.4 8.1 4.8 2.5 0.8 -0.8 -2.5 -4.2 -5.5 -6.7 -6.9 -7.5 S21 Mag. 4.69 2.53 1.73 1.34 1.10 .91 .75 .62 .53 .46 .45 .42 Ang. 104 74 54 35 16 -5 -25 -39 -52 -64 -78 -95 dB -28.2 -26.7 -26.7 -25.7 -25.5 -23.6 -23.4 -22.7 -22.2 -20.9 -19.3 -17.2 S12 Mag. .039 .046 .046 .052 .053 .066 .068 .073 .078 .090 .108 .138 S22 Ang. 31 21 22 17 13 0 -7 -13 -18 -24 -33 -49 Mag. .29 .38 .44 .47 .49 .52 .56 .62 .68 .72 .73 .73 Ang. -154 -164 -167 -175 175 160 144 132 124 118 112 101
A model for this device is available in the DEVICE MODELS section.
100 mil Flange Dimensions
4 GATE 1 .05 R, TYP 1.3 SOURCE DRAIN 3 .062 DIA. 1.57 (2) PLCS 2 SOURCE .03 0.8 .12 3.0
.42 .265 10.7 6.73
0.025 0.003 mils 0.64 0.08 mm .044 1.12 .100 2.54
.06 1.6
.300 min
.004 .002 .10 .05
Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = 0.005 mm .xx = 0.13
Package marking code is 441
5-91


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